| PART |
Description |
Maker |
| IRFR224B IRFU224B IRFR224BTMFP001 IRFR224BTMNL |
250V N-Channel B-FET / Substitute of IRFR224 & IRFR224A
250V N-Channel MOSFET
|
Fairchild Semiconductor
International Rectifier
|
| IRFM214B IRFM214BTFFP001 |
250V N-Channel B-FET / Substitute of IRFM214A
250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFW624B IRFI624B IRFW624BTMFP001 |
250V N-Channel B-FET / Substitute of IRFW624A
250V N-Channel MOSFET 4.1 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| FQI27N25 FQB27N25 FQB27N25TMAM002 FQB27N25TMNAM002 |
250V N-Channel MOSFET(漏源电压250VN沟道增强型MOS场效应管) 25.5 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
250V N-Channel MOSFET(漏源电压50V的N沟道增强型MOS场效应管)
250V N-Channel QFET
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRF634NL IRF634NS IRF634NSTRR |
Power MOSFET(Vdss=250V/ Rds(on)=0.435ohm/ Id=8.0A)
Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 250V，的Rds（on）\u003d 0.435ohm，身份证\u003d 8.0A
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 250V五（巴西）直| 8A条（丁）|63AB
|
International Rectifier, Corp.
|
| FQI16N25 FQB16N25 FQB16N25TM |
250V N-Channel MOSFET
250V N-Channel QFET
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| FQD6P25 FQU6P25 FQD6P25TF FQD6P25TM |
250V P-Channel QFET
250V P-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQB6P25 FQI6P25 FQB6P25TM |
250V P-Channel QFET
250V P-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| SFR9224 SFU9224 U9224 SFRU9224 SFR9224TM SFR9224TF |
Advanced Power MOSFET
250V P-Channel A-FET
P-CHANNEL POWER MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQG4902 FQG4902TU |
250V Dual N & P-Channel QFET
250V Dual N & P-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFI644G IRFI644 IRFI644GPBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=250V Rds(on)=0.28ohm Id=7.9A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=250V/ Rds(on)=0.28ohm/ Id=7.9A)
Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A) 功率MOSFET（减振钢板基本\u003d 250V，的Rds（on）\u003d 0.28ohm，身份证\u003d 7.9A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
